Title :
Metallic channels formed by high surface fields on GaAs planar devices
Author :
Fallman, W.F. ; Hartnagel, H.L.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Abstract :
Experimental finding are presented which show, among other results, that material migration also occurs along semi-insulating surfaces for GaAs planar devices.
Keywords :
Gunn devices; electrical contacts; resistance (electric); semiconductor materials; surface phenomena; GaAs planar devices; Gunn devices; contacts; high surface fields; material migration; metallic channels; resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710473
