Title :
Bulk switching of an amorphous semiconductor
Author :
Haden, C.R. ; Stone, J.L. ; Linder, J.S.
Author_Institution :
Texas A&M University, College Station, Tex.
Abstract :
Bulk switching of a Si3Ge4As38Te55amorphous semiconductor is reported. Even though the contacts are separated by 1 mm, a delay time of only 10 µs is observed. This is attributed to an active region of only 0.1-mm thickness near the positive electrode. The threshold voltage is 250 volts at room temperature.
Keywords :
Amorphous materials; Amorphous semiconductors; Conductors; Delay effects; Electrodes; Glass; Semiconductivity; Space vector pulse width modulation; Temperature; Threshold voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.8035
