DocumentCode :
915223
Title :
Frequency dependence of negative-capacitance effects observed in amorphous semiconductor thin-film devices
Author :
Allison, J. ; Dawe, V.R.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Volume :
7
Issue :
24
fYear :
1971
Firstpage :
706
Lastpage :
707
Abstract :
A simple thermal model is analysed which explains the observed frequency dependence of the negative capacitance of chalcogenide-glass threshold switches at room temperature.
Keywords :
capacitance; semiconductor devices; semiconductor materials; semiconductor switches; semiconductor thin films; thin film devices; amorphous semiconductor thin film devices; chalcogenide glass threshold switches; frequency dependence of negative capacitance effects; room temperature; thermal model;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19710484
Filename :
4235390
Link To Document :
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