DocumentCode
915264
Title
Contact effects in Gunn diodes
Author
Gurney, W.S.C.
Author_Institution
Mullard Research Laboratories, Redhill, UK
Volume
7
Issue
24
fYear
1971
Firstpage
711
Lastpage
713
Abstract
This letter shows how the splitting of the forward and reverse current/voltage curves of a Gunn diode may be interpreted in terms of different models of contact damage, and proposes a simple test technique to obtain a quantitative measure of contact quality. Experimental verification of this technique is presented, showing a correlation between device efficiency and a contact parameter Ã.
Keywords
Gunn diodes; electrical contacts; semiconductor device testing; Gunn diodes; contact effects; donor notch model; mobility notch model; models of contact damage; quantitative measure of contact quality; simple test technique; splitting of forward and reverse current/voltage characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710488
Filename
4235394
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