• DocumentCode
    915264
  • Title

    Contact effects in Gunn diodes

  • Author

    Gurney, W.S.C.

  • Author_Institution
    Mullard Research Laboratories, Redhill, UK
  • Volume
    7
  • Issue
    24
  • fYear
    1971
  • Firstpage
    711
  • Lastpage
    713
  • Abstract
    This letter shows how the splitting of the forward and reverse current/voltage curves of a Gunn diode may be interpreted in terms of different models of contact damage, and proposes a simple test technique to obtain a quantitative measure of contact quality. Experimental verification of this technique is presented, showing a correlation between device efficiency and a contact parameter ß.
  • Keywords
    Gunn diodes; electrical contacts; semiconductor device testing; Gunn diodes; contact effects; donor notch model; mobility notch model; models of contact damage; quantitative measure of contact quality; simple test technique; splitting of forward and reverse current/voltage characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710488
  • Filename
    4235394