Title :
Small-signal equivalent π networks for carrier generation--recombination--trapping at imperfection centres in semiconductors
Author_Institution :
University of Illinois, Department of Electrical Engineering, Urbana, USA
Abstract :
A π network for carrier generation--recombination--trapping processes under arbitrary steady-state conditions is obtained, which has the following features which are useful for computer calculations of the admittance functions of semiconductor devices: the admittances are positive real, the voltage-controlled current sources are connected between the hole and electron quasi-Fermi potential nodes, and the current sources vanish at zero external excitation.
Keywords :
equivalent circuits; network synthesis; semiconductor defects; semiconductor device models; carrier generation recombination trapping; computer calculations of an admittance functions; imperfection centres in semiconductors; nonequilibrium DC steady state conditions; semiconductor device models; small signal equivalent pi networks;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710489
