Title :
Silicon etch-refill p+-p-n+ epitaxial X-band IMPATT device
Author :
Mark, Andrew ; Harmatz, M.
Abstract :
Selectively deposited silicon double epitaxial p+-p-n+ diodes of an IMPATT design have been used to generate the X-band microwave power.
Keywords :
Bonding; Capacitance; Current measurement; Diodes; Etching; Fabrication; Leakage current; Silicon; Thermal resistance; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.8048
