Title :
Two-dimensional analysis of j.f.e.t. structures containing a low-conductivity substrate
Author :
Kennedy, D.P. ; O´Brien, R.R.
Author_Institution :
IBM Components Division, East Fishkill Laboratories, Hopewell Junction, USA
Abstract :
It is shown that j.f.e.t. structures containing a semiconductor substrate can sometimes exhibit a substantially lower saturation resistance than structures containing an ideally insulating substrate. This characteristic is attributed to velocity-limited carrier transport, in conjunction with the spreading of majority carriers into the semiconductor-substrate material.
Keywords :
field effect transistors; substrates; JFET structures with low conductivity substrate; field effect transistors; substantially lower saturation resistance; two dimensional analysis; velocity limited carrier transport;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710490
