DocumentCode
915323
Title
Sidegating effect of GaAs MESFETs in carbon doped GaAs substrate
Author
Fujimoto, Kenji ; Tamura, A.
Author_Institution
Matsushita Electric Industrial Co. Ltd., Osaka, Japan
Volume
29
Issue
12
fYear
1993
fDate
6/10/1993 12:00:00 AM
Firstpage
1080
Lastpage
1081
Abstract
The sidegating effect of GaAs MESFETs in carbon doped semi-insulating GaAs substrate was investigated. Measurement results suggest that both the hole injection at one part of the gate electrode, and the modulation of the width of the depletion layer near the interface between the channel and substrate, cause the sidegating effect of GaAs MESFETs. Also, with the increase of carbon concentration, the latter cause becomes dominant in the sidegating effect.
Keywords
III-V semiconductors; Schottky gate field effect transistors; carbon; gallium arsenide; semiconductor doping; C concentrations; GaAs-GaAs:C; GaAs:C substrate; MESFETs; O doped substrate; depletion layer width modulation; gate electrode; hole injection; sidegating effect;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930721
Filename
220817
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