DocumentCode :
915341
Title :
Digital transmission experiment with monolithic 4*4 InGaAsP/InP laser amplifier gate switch array
Author :
Gustavsson, M. ; Janson, M. ; Lundgren, L.
Author_Institution :
Ericsson Telecom AB, Stockholm, Sweden
Volume :
29
Issue :
12
fYear :
1993
fDate :
6/10/1993 12:00:00 AM
Firstpage :
1083
Lastpage :
1085
Abstract :
Digital transmission experiments at 2.488 Gbit/s involving a monolithic 4*4 semiconductor laser amplifier gate switch array operating at around 0 dB fibre-to-fibre gain have been performed. Receiver power penalties less than 1 dB are reported for a switch input power range in excess of 10 dB. Results on switch saturation include a switch signal output power, coupled to the output fibre, of -5 dBm for 3 dB gain compression of the 4*4 switch.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical links; optical switches; semiconductor laser arrays; semiconductor switches; 2.488 Gbit/s; 4 by 4 switch; InGaAsAsP-InP; digital transmission; fibre-to-fibre gain; gain compression; monolithic 4*4 InGaAsP/InP laser amplifier gate switch array; pin/FET receiver; receiver power penalties; semiconductor laser amplifier; switch input power range; switch saturation; switch signal output power;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930723
Filename :
220819
Link To Document :
بازگشت