Title :
Computer comparison of n+--p--p+ and p+--n--n+ junction silicon diodes for IMPATT oscillators
Author :
Udelson, B.J. ; Ward, A.L.
Author_Institution :
US Department of Defense, Harry Diamond Laboratories, Washington, USA
Abstract :
A digital-computer program has been used to compare the performance of an n+--p--p+ silicon avalanche diode with its more conventional p+--n--n+ complementary junction in IMPATT-oscillator operation. The computer simulation of the former junction predicts a significant improvement of oscillator efficiency (20.1 against 13.9%).
Keywords :
IMPATT diodes; computer applications; electronics applications of computers; microwave oscillators; semiconductor junctions; simulation; IMPATT diode; IMPATT oscillator; comparison of n+-p-p+ and p+-n-n + junction Si diodes; computer simulation; digital computer program; electronics applications of computers; microwave oscillators; oscillator efficiency; semiconductor junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710496
