• DocumentCode
    915355
  • Title

    Computer comparison of n+--p--p+ and p+--n--n+ junction silicon diodes for IMPATT oscillators

  • Author

    Udelson, B.J. ; Ward, A.L.

  • Author_Institution
    US Department of Defense, Harry Diamond Laboratories, Washington, USA
  • Volume
    7
  • Issue
    24
  • fYear
    1971
  • Firstpage
    723
  • Lastpage
    724
  • Abstract
    A digital-computer program has been used to compare the performance of an n+--p--p+ silicon avalanche diode with its more conventional p+--n--n+ complementary junction in IMPATT-oscillator operation. The computer simulation of the former junction predicts a significant improvement of oscillator efficiency (20.1 against 13.9%).
  • Keywords
    IMPATT diodes; computer applications; electronics applications of computers; microwave oscillators; semiconductor junctions; simulation; IMPATT diode; IMPATT oscillator; comparison of n+-p-p+ and p+-n-n + junction Si diodes; computer simulation; digital computer program; electronics applications of computers; microwave oscillators; oscillator efficiency; semiconductor junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710496
  • Filename
    4235402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=915355