• DocumentCode
    915372
  • Title

    Strained-InGaAsP MQW electroabsorption modulator integrated DFB laser

  • Author

    Sato, Kiminori ; Kotaka, I. ; Wakita, Ken ; Kondo, Yuta ; Yamamoto, Manabu

  • Author_Institution
    NTT Optoelectron Labs., Atsugi, Japan
  • Volume
    29
  • Issue
    12
  • fYear
    1993
  • fDate
    6/10/1993 12:00:00 AM
  • Firstpage
    1087
  • Lastpage
    1089
  • Abstract
    The monolithic integration of a strained-InGaAsP MQW electroabsorption modulator and a DFB laser using only two-step MOVPE growth is described. The extinction ratio is 20 dB with a low-driving voltage of 1.4 V for an optical power density of 102 kW/cm2.
  • Keywords
    III-V semiconductors; distributed feedback lasers; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical modulation; semiconductor lasers; semiconductor quantum wells; 1.4 V; InGaAsP; extinction ratio; integrated DFB laser; low-driving voltage; monolithic integration; optical power density; strained-InGaAsP MQW electroabsorption modulator; two-step MOVPE growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930726
  • Filename
    220822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=915372