DocumentCode :
915372
Title :
Strained-InGaAsP MQW electroabsorption modulator integrated DFB laser
Author :
Sato, Kiminori ; Kotaka, I. ; Wakita, Ken ; Kondo, Yuta ; Yamamoto, Manabu
Author_Institution :
NTT Optoelectron Labs., Atsugi, Japan
Volume :
29
Issue :
12
fYear :
1993
fDate :
6/10/1993 12:00:00 AM
Firstpage :
1087
Lastpage :
1089
Abstract :
The monolithic integration of a strained-InGaAsP MQW electroabsorption modulator and a DFB laser using only two-step MOVPE growth is described. The extinction ratio is 20 dB with a low-driving voltage of 1.4 V for an optical power density of 102 kW/cm2.
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical modulation; semiconductor lasers; semiconductor quantum wells; 1.4 V; InGaAsP; extinction ratio; integrated DFB laser; low-driving voltage; monolithic integration; optical power density; strained-InGaAsP MQW electroabsorption modulator; two-step MOVPE growth;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930726
Filename :
220822
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=915372
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