Title :
High-speed molybdenum-gate m.o.s.t. shift register
Author :
Curtis, T. ; Kemhajian, H.
Author_Institution :
University of Southampton, Department of Electronics, Southampton, UK
Abstract :
An autoregistered fabrication process is described, in which a molybdenum-on-oxide gate is deposited which acts as a mask for subsequent diffusions and minimises the overlap capacitance. Experimental results show improved h.f. performance.
Keywords :
metal-insulator-semiconductor devices; semiconductor device manufacture; shift registers; Mo on oxide gate; autoregistered fabrication process; high-speed MOST shift register; metal insulator semiconductor devices; semiconductor device manufacture;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710500
