DocumentCode
915408
Title
High-speed molybdenum-gate m.o.s.t. shift register
Author
Curtis, T. ; Kemhajian, H.
Author_Institution
University of Southampton, Department of Electronics, Southampton, UK
Volume
7
Issue
24
fYear
1971
Firstpage
729
Lastpage
730
Abstract
An autoregistered fabrication process is described, in which a molybdenum-on-oxide gate is deposited which acts as a mask for subsequent diffusions and minimises the overlap capacitance. Experimental results show improved h.f. performance.
Keywords
metal-insulator-semiconductor devices; semiconductor device manufacture; shift registers; Mo on oxide gate; autoregistered fabrication process; high-speed MOST shift register; metal insulator semiconductor devices; semiconductor device manufacture;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710500
Filename
4235406
Link To Document