Title :
Monolithically integrated HBT/MESFET circuit
Author :
Zampardi, P.J. ; Beccue, S.M. ; Pedrotti, K.D. ; Pierson, R.L. ; Chang, M.F. ; Wang, K.C. ; Cheskis, D. ; Chang, C.E. ; Asbeck, P.M.
Author_Institution :
Rockwell International Science Center, Thousand Oaks, CA, USA
fDate :
6/10/1993 12:00:00 AM
Abstract :
The first circuit demonstrated using monolithically integrated GaAlAs/GaAs heterojunction bipolar transistors (HBTs) and metal-semiconductor field effect transistors (MESFETs) is described. The fabrication technology is a natural extension to baseline HBT technology. The planarity of the device fabrication process allows the MESFETs and HBTs to be closely spaced. The circuit, a CML-DCFL-CML convertor, is an important building block for the future integration of HBT and MESFET circuitry. This circuit consists of HBTs, and enhancement (E) and depletion (D) mode MESFETs. The circuit operated properly at 1 GHz.
Keywords :
III-V semiconductors; aluminium compounds; direct coupled FET logic; emitter-coupled logic; gallium arsenide; integrated logic circuits; monolithic integrated circuits; 1 GHz; CML-DCFL-CML convertor; GaAlAs-GaAs; fabrication technology; integrated HBT/MESFET circuit; metal-semiconductor field effect transistors; monolithically integrated GaAlAs/GaAs heterojunction bipolar transistors; planarity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930734
