Title :
Experimental comparison of silicon p+-n-p+ and Cr-n-p+ transit-time oscillators
Author :
Snapp, Craig P. ; Weissolas, Peter
Author_Institution :
Microwave Institute Foundation, Stockholm, Sweden
Abstract :
Punchthrough transit-time diodes have been constructed with both Schottky-barrier and diffused-junction emitters. The microwave and d.c. characteristics of these devices are strikingly similar. Either construction technique appears to be suitable for the future development of low-noise microwave sources.
Keywords :
microwave oscillators; semiconductor diodes; transit time devices; Cr-n-p+ transit time oscillator; DC characteristics; Schottky barrier emitters; Si p+-n-p+ transit time oscillator; diffused junction emitters; low noise microwave sources; microwave characteristics; microwave oscillators; punchthrough transit time diode; semiconductor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710509
