Investigation into the technique of active reactance compensation to improve the gain-bandwidth performance of microwave bipolar transistor amplifiers

The technique of reactance compensation, known to be a successful circuit method of improving the bandwidth of single-port amplifiers, is investigated for two-port transistor amplifiers. A 3 GHz uncompenasted bipolar transistor amplifier of 800 MHz bandwidth and 6.5 dB gain, can be improved by about 70% in bandwidth under optimum conditions at the expense of about 1.3 dB reduction in the gain.