Title :
Screened impurity scattering in heavily doped covalent semiconductors
Author_Institution :
University of Wales Institute of Science & Technology, Department of Applied Physics, Cardiff, UK
Abstract :
A method is presented for determining the relative strengths of acoustic lattice scattering and screened impurity scattering in heavily doped semiconductors from measurements of their Hall mobility and thermoelectric power. Screening of the impurity centres by the free carriers results in an appreciable reduction in the impurity-scattering contribution, and this effect is estimated for heavily doped n type germanium.
Keywords :
Hall effect; semiconductor doping; semiconductors; thermoelectricity; Hall mobility; acoustic lattice scattering; covalent semiconductors; heavily doped semiconductors; n-Ge; screened impurity scattering; thermoelectric power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710521
