Title :
Highly uniform GaAs/AlGaAs GRIN-SCH SQW diode lasers grown by organometallic vapor phase epitaxy
Author :
Wang, C.A. ; Choi, H.K. ; Connors, M.K.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Broad-area graded-index separate-confinement-heterostructure (GRIN-SCH) diode lasers were fabricated with a single 10-nm-thick Al/sub 0.07/Ga/sub 0.93/As quantum-well active layer. For the characteristics measured during pulsed operation of 175-192 lasers with a cavity length of 500 mu m, distributed over a 16 cm/sup 2/ wafer, the mean values and standard deviations are, respectively: threshold current density 288 and 11.3 A/cm/sup 2/; differential quantum efficiency 83.0 and 2.5%; and emission wavelength 804.9 and 0.6 nm. For lasers from ten wafers grown under the same nominal conditions, the wavelengths range from 803.5 to 807.4 nm.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 10 nm; 16 cm; 500 micron; 803.5 to 807.4 nm; Al/sub 0.07/Ga/sub 0.93/As; GaAs-AlGaAs; GaAs/AlGaAs GRIN-SCH SQW diode lasers; broad area graded index separate confinement heterostructure; cavity length; characteristics; differential quantum efficiency; emission wavelength; organometallic vapor phase epitaxy; pulsed operation; quantum-well active layer; semiconductor quantum well diode lasers; standard deviations; threshold current density; wafer; Current measurement; Density measurement; Diode lasers; Gallium arsenide; Length measurement; Measurement standards; Optical pulses; Pulse measurements; Quantum well lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
