• DocumentCode
    915663
  • Title

    Extremely smooth sidewalls for GaAs/AlGaAs ridge waveguides

  • Author

    Arnot, H.E.G. ; Zappe, H.P. ; Epler, J.E. ; Graf, B. ; Widmer, Rolf ; Lehmann, H.W.

  • Author_Institution
    Paul Scherrer Inst., Zurich, Switzerland
  • Volume
    29
  • Issue
    12
  • fYear
    1993
  • fDate
    6/10/1993 12:00:00 AM
  • Firstpage
    1131
  • Lastpage
    1133
  • Abstract
    Magnetic field enhanced reactive ion etching using SiCl4, combined with a smooth reflowed photoresist masking technique, has been used to fabricate AlGaAs ridge waveguides with extremely smooth sidewalls. The effect of pressure, flowrate and power on etch rate and sidewall smoothness has been studied. Waveguides exhibited optical losses comparable to those obtained using wet etching.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; masks; optical losses; optical waveguides; optical workshop techniques; sputter etching; surface topography; AlGaAs ridge waveguides; GaAs-AlGaAs; MERIE; SiCl 4; etch rate; extremely smooth sidewalls; magnetic field enhanced RIE; optical losses; photoresist reflow; sidewall smoothness; smooth reflowed photoresist masking technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930755
  • Filename
    220851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=915663