Title :
Extremely smooth sidewalls for GaAs/AlGaAs ridge waveguides
Author :
Arnot, H.E.G. ; Zappe, H.P. ; Epler, J.E. ; Graf, B. ; Widmer, Rolf ; Lehmann, H.W.
Author_Institution :
Paul Scherrer Inst., Zurich, Switzerland
fDate :
6/10/1993 12:00:00 AM
Abstract :
Magnetic field enhanced reactive ion etching using SiCl4, combined with a smooth reflowed photoresist masking technique, has been used to fabricate AlGaAs ridge waveguides with extremely smooth sidewalls. The effect of pressure, flowrate and power on etch rate and sidewall smoothness has been studied. Waveguides exhibited optical losses comparable to those obtained using wet etching.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; masks; optical losses; optical waveguides; optical workshop techniques; sputter etching; surface topography; AlGaAs ridge waveguides; GaAs-AlGaAs; MERIE; SiCl 4; etch rate; extremely smooth sidewalls; magnetic field enhanced RIE; optical losses; photoresist reflow; sidewall smoothness; smooth reflowed photoresist masking technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930755
