Title :
Monolithic GaAs/AlGaAs pin MESFET photoreceiver using a single molecular beam epitaxy growth step
Author :
Nichols, David ; Dutta, N.K. ; Berger, P.R. ; Smith, Peter ; Sivco, D. ; Cho, Andrew Y.
Author_Institution :
AT&T Bell Labs., Murray Hil, NJ, USA
fDate :
6/10/1993 12:00:00 AM
Abstract :
A monolithic pin/MESFET photoreceiver in the GaAs/AlGaAs system was investigated. The structure used a single epitaxial growth step in which the pin photodiode was grown on top of the MESFET. The photoreceivers exhibited flatband gains as high as 17 dB and bandwidths as high as 2.0 GHz.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; p-i-n photodiodes; semiconductor growth; 17 dB; 2 GHz; GaAs-AlGaAs; bandwidths; flatband gains; molecular beam epitaxy growth; monolithic pin/MESFET photoreceiver; pin photodiode; single epitaxial growth step;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930756
