Title :
Quantum well AlGaAs/GaAs monolithic colliding pulse modelocked laser
Author :
Martins-Filho, J.F. ; Ironside, C.N. ; Roberts, Jeffrey S.
Author_Institution :
Glasgow Univ., UK
fDate :
6/10/1993 12:00:00 AM
Abstract :
The design, fabrication and characterisation of a short wavelength ( approximately 860 nm) quantum well AlGaAs/GaAs monolithic colliding pulse modelocked (CPM) laser are described. Devices with modelocked operation repetition rates in the range 73-129 GHz and pulse widths less than 2 ps are described. The importance of the polarisation dependence of the saturable absorber and the gain section in the operation of a quantum well monolithic CPM is discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser mode locking; semiconductor lasers; 73 to 129 GHz; 860 nm; AlGaAs-GaAs; design; fabrication; gain section; modelocked operation repetition rates; polarisation dependence; pulse widths; quantum well monolithic colliding pulse modelocked laser; saturable absorber; short wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930757
