Title :
Evaluation of an approximated doping profile for diffused junctions from capacitance measurements
Author :
Calzolari, P.U. ; Graffi, S.
Author_Institution :
UniversitÃ\xa0 di Bologna, Istituto di Elettronica FacoltÃ\xa0 di Ingegneria, Bologna, Italy
Abstract :
The differential-capacitance technique for the evaluation of doping profiles of the low-doped side of strongly asymmetrical p-n junctions may be extended to diffused junctions, provided that the actual profile is approximated by an exponential function. An easy fit between experimental and theoretical curves allows evaluation of the two parameters of the exponential approximation.
Keywords :
capacitance measurement; diffusion; p-n junctions; semiconductor doping; asymmetrical p-n junctions; differential capacitance technique; diffused junctions; doping profiles; exponential functions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710527
