Title :
Shallow p-type ohmic contact to Ga0.47In0.53As using Au/Ti/Mn/W
Author :
Chang, T.Y. ; He, Yuhong ; Sauer, N.J. ; Williams, M.D.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
6/10/1993 12:00:00 AM
Abstract :
The specific contact resistances of annealed Au/Ti/W contacts on 0.2 and 2*1019 cm-3 Be doped GaInAs are found to decrease by factors of approximately 1000 and approximately 3, respectively, when a thin Mn layer is inserted between Ti and W, reaching 2.7*10-6 Omega cm2 in the latter case. This type of shallow and thermally stable p-type ohmic contact avoids the problems associated with very high Be, or Zn doping and should be well suited for applications in high performance devices on InP substrate.
Keywords :
III-V semiconductors; contact resistance; gallium arsenide; gold; indium compounds; manganese; metallisation; ohmic contacts; semiconductor-metal boundaries; titanium; tungsten; Ga 0.47In 0.53As; Ga 0.47In 0.53As-Au-Ti-Mn-W; InP substrate; high performance devices; shallow p-type ohmic contact; specific contact resistances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930760
