• DocumentCode
    915755
  • Title

    Broadband high-power TRAPATT diode amplifier at S band

  • Author

    Rosen, Arye ; Reynolds, J.F. ; Assour, J.M.

  • Author_Institution
    RCA Laboratories, Princeton, USA
  • Volume
    7
  • Issue
    26
  • fYear
    1971
  • Firstpage
    778
  • Lastpage
    779
  • Abstract
    This letter describes the use of a coupled TEM line circuit with high-power high-efficiency silicon avalanche diodes to achieve broadband pulsed amplification in S band. An output power of 50 W, with 6 dB gain and 10% instantaneous 3 dB bandwidth centred at 2.7 GHz, has been obtained.
  • Keywords
    avalanche diodes; coupled circuits; microwave amplifiers; power amplifiers; transit time devices; wideband amplifiers; 50 W; S-band; coupled TEM line circuit; silicon avalanche diodes; wideband TRAPATT diode power amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710531
  • Filename
    4235439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=915755