Title :
Broadband high-power TRAPATT diode amplifier at S band
Author :
Rosen, Arye ; Reynolds, J.F. ; Assour, J.M.
Author_Institution :
RCA Laboratories, Princeton, USA
Abstract :
This letter describes the use of a coupled TEM line circuit with high-power high-efficiency silicon avalanche diodes to achieve broadband pulsed amplification in S band. An output power of 50 W, with 6 dB gain and 10% instantaneous 3 dB bandwidth centred at 2.7 GHz, has been obtained.
Keywords :
avalanche diodes; coupled circuits; microwave amplifiers; power amplifiers; transit time devices; wideband amplifiers; 50 W; S-band; coupled TEM line circuit; silicon avalanche diodes; wideband TRAPATT diode power amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710531
