Title :
A semiconductor-ferroelectric memory device
Author :
Sawyer, D.E. ; Sandstrom, D.B.
Abstract :
The development of monolithic, optically written, and electrically read memory elements employing single-crystal barium titanate is described. Both single and multiple-unit structures have been made. These structures can be fabricated using techniques similar to those employed in integrated circuits.
Keywords :
Capacitors; Delay effects; Electrodes; Equivalent circuits; Ferroelectric materials; Optical sensors; Optical surface waves; Schottky diodes; Semiconductivity; Temperature;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8097
