DocumentCode :
915828
Title :
Photoemission yield dependency on bandgap energy for GaInAs alloys
Author :
Jackson, D.A. ; Yee, E.M.
Volume :
59
Issue :
1
fYear :
1971
Firstpage :
90
Lastpage :
91
Abstract :
The photoemission yield dependency on bandgap energy has been investigated for GaInAs alloys by obtaining a series of spectral response curves for each alloy. The results qualitatively agree with calculated values.
Keywords :
Admittance; Capacitance; Diodes; Electron mobility; Photoelectricity; Photonic band gap; Power generation; Power system harmonics; Radio frequency; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1971.8100
Filename :
1450030
Link To Document :
بازگشت