DocumentCode :
915882
Title :
Electrically pumped, micro-cavity based single photon source driven at 1 GHz
Author :
Lochmann, A. ; Stock, E. ; Töfflinger, J.A. ; Unrau, W. ; Toropov, A. ; Bakarov, A. ; Haisler, V. ; Bimberg, D.
Author_Institution :
Inst. fuer Festkoerperphys., Tech. Univ. Berlin, Berlin
Volume :
45
Issue :
11
fYear :
2009
Firstpage :
566
Lastpage :
567
Abstract :
A resonant cavity light emitting diode combined with a submicron oxide current aperture, to pump individual InGaAs/GaAs quantum dots electrically, has been designed and fabricated. Pulsed correlation measurements demonstrated true single photon emission with g2(0)=0 at a rate of 1=GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; semiconductor device models; semiconductor quantum dots; InGaAs-GaAs; frequency 1 GHz; microcavity based single photon source; pulsed correlation measurement; resonant cavity light emitting diode; semiconductor quantum dots; single photon emission; submicron oxide current aperture;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.1056
Filename :
4976884
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=915882
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