DocumentCode :
915886
Title :
Metal-nitride-oxide-silicon-capacitor arrays as electrical and optical stores
Author :
Vanstone, G.F.
Author_Institution :
Royal Radar Establishment, Malvern, UK
Volume :
8
Issue :
1
fYear :
1972
Firstpage :
13
Lastpage :
14
Abstract :
Metal-nitride-oxide-silicon capacitor arrays can be used to store information which is presented to the input as an electrical or optical pattern. The stored information can be read sequentially and nondestructively. Such arrays offer the possibility of high-density memories which are simple in structure and mode of operation.
Keywords :
capacitor storage; capacitors; metal-insulator-semiconductor devices; optical stores; semiconductor storage devices; capacitor arrays; high density memories; metal nitride oxide silicon; nondestructive; optical stores;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19720010
Filename :
4235453
Link To Document :
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