Reliability issues of flash memory cells

Author

Aritome, Seiichi ; Shirota, Riichiro ; Hemink, Gertjan ; Endoh, Tetsuo ; Masuoka, Fujio

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

81

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

776

Lastpage

788

Abstract

Reliability issues for flash electrically erasable programmable read-only memories are reviewed. The reliability of both the source-erase type (ETOX) flash memory and the NAND structure EEPROM are discussed. Disturbs during programming, write/erase endurance, charge loss of both devices are reviewed, and the reliability of the tunnel oxide and the interpoly dielectric are described. It is shown that bipolarity F-N programming/erase, which is used in the NAND EEPROM, improves the charge to breakdown and decreases the stress-induced leakage current

Keywords

EPROM; circuit reliability; integrated memory circuits; leakage currents; NAND EEPROM; bipolarity F-N programming/erase; charge loss; electrically erasable; flash memory cells; interpoly dielectric; programmable read-only memories; reliability; source-erase type; stress-induced leakage current; tunnel oxide; Application software; EPROM; Flash memory; Flash memory cells; Hard disks; History; Magnetic semiconductors; Nonvolatile memory; Semiconductor device reliability; Semiconductor memory;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.220908

Filename

220908