DocumentCode :
915907
Title :
Improved technique for the preparation of GaxAl1--xAs electroluminescent diodes
Author :
Beneking, H. ; Mischel, P. ; Schul, G.
Author_Institution :
RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
Volume :
8
Issue :
1
fYear :
1972
Firstpage :
16
Lastpage :
17
Abstract :
An improved technique for the preparation of GaxAl1--xAs electroluminescent diodes is described. Multilayer structures grown by liquid-phase epitaxy are used to achieve high external quantum efficiencies.
Keywords :
electroluminescence; epitaxial growth; semiconductor diodes; GaxAl1--xAs; electroluminescent diodes; improved technique; multilayer structures; preparation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19720012
Filename :
4235455
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=915907
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