Title :
Current collapse reduction in InAIM/GaN MOS hemtHEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics
Author :
Abermann, S. ; Pozzovivo, G. ; Kuzmik, J. ; Ostermaier, C. ; Henkel, C. ; Bethge, O. ; Strasser, G. ; Pogany, D. ; Carlin, J.-F. ; Grandjean, N. ; Bertagnolli, E.
Author_Institution :
Inst. for Solid State Electron., Vienna Univ. of Technol., Vienna
Abstract :
Atomic layer deposition (ALD) is supplied to grow ZrO2 high-k gate dielectrics and fabricate InAlN/GaN metal oxide semiconductor (MOS) high electron mobility transistors (HEMTs). Ex situ chemical surface cleaning and optimised in situ InAlN surface pre-treatment by ALD lead to a substantial suppression of drain-source current collapse owing to a high-quality InAlN/oxide interface. In addition, the gate leakage current was suppressed by about three orders of magnitude.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; atomic layer deposition; gallium compounds; high electron mobility transistors; high-k dielectric thin films; indium compounds; leakage currents; surface cleaning; wide band gap semiconductors; zirconium compounds; InAlN-GaN; MOS HEMT; ZrO2; atomic layer deposition; chemical surface cleaning; drain-source current collapse; gate leakage current; high electron mobility transistor; high-k gate dielectrics; in situ surface pre-treatment; metal oxide semiconductor HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.0728
