Title :
Two-phase m.n.o.s. charge-coupled device
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
A 2-phase charge-coupled device (c.c.d.) is proposed. It makes use of charge storage in an m.n.o.s. structure to define in the silicon substrate the asymmetrical potential wells required for unidirectional charge flow. The fabrication and operation of the device are described. The structure permits substantial simplification of the fabrication method as compared with other c.c.d.s.
Keywords :
metal-insulator-semiconductor devices; semiconductor device manufacture; asymmetrical potential wells; charge storage; fabrication; operation; silicon substrate; two phase MNOS charge coupled device; unidirectional charge flow;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720017
