Title :
Modified bipolar-phototransistor structure
Author :
Holmes, F.E. ; Salama, C.A.T.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
A modified bipolar-phototransistor structure suitable for use in large imaging arrays is described. The structure exhibits an improved capacitance ratio and reduced dark current. Despite a reduced spectral sensitivity, the proposed device has performance advantages compared with those of the standard phototransistor when used in the charge-storage mode.
Keywords :
bipolar transistors; phototransistors; capacitance ratio; dark current; large imaging arrays; spectral sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720019
