DocumentCode :
915984
Title :
Punchthrough oscillator---new microwave solid-state source
Author :
Sultan, N.B. ; Wright, G.T.
Author_Institution :
University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
Volume :
8
Issue :
2
fYear :
1972
Firstpage :
24
Lastpage :
26
Abstract :
The performances of silicon p-n-p punchthrough oscillators have been studied experimentally at X band in a coaxial cavity. A range of mechanical tuning of more than 3 GHz has been obtained. The oscillator performance at current densities up to about 200 A/cm has been related to the measured diode impedance. The wide-active-band, sensitive-electronic-tuning and low-noise properties of the punchthrough oscillator suggest promising applications as a microwave signal source, as a local oscillator, in f.m.-c.w. radar and in a.f.c.
Keywords :
cavity resonators; microwave oscillators; tuning; 200 A/cm; AFC; FM CW radar; X-band; coaxial cavity; local oscillator; mechanical tuning; microwave signal source; silicon p-n-p punchthrough oscillators;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19720020
Filename :
4235464
Link To Document :
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