Title :
Work function difference between p-type polycrystalline silicon and n-type single-crystal silicon
Author :
Mai, C.C. ; Whitehouse, T.S.
Abstract :
The work function difference between p-type polycrystalline silicon and n-type single-crystal silicon has been found from flat-band measurements on MNOS capacitors to be +1.55 V when the concentration in the p-type silicon is 1019atoms/cm3and the concentration in the n-type silicon is 1015atoms/cm3.
Keywords :
Atomic measurements; Bandwidth; Electrons; Filter bank; Frequency; Inductance; Silicon; Spectral analysis; Speech; Threshold voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8147
