Title :
Frequency/temperature relationships of c.w. IMPATT diodes
Author :
Tozer, R.C. ; Hobson, G.S.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Some measurements of the relationship between frequency and ambient temperature for c.w. IMPATT diodes are reported. Several diodes have been characterised between 9 and 13 GHz for various bias and coupling conditions. An interpretation of the results is presented on the basis of several simple models. Reasonable agreement with experiment is observed, considering the limitations of the models.
Keywords :
IMPATT diodes; semiconductor device models; thermal effects; IMPATT diodes; ambient temperature; coupling; modelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720053
