Title :
Amorphous-crystalline silicon junctions
Author :
Jayadevaiah, T.S. ; Busmundrud, Odd
Author_Institution :
University of Wisconsin-Milwaukee, Laboratory for Surface Studies and College of Applied Science & Engineering, Milwaukee, USA
Abstract :
High barriers are observed in amorphous-p-type-silicon junctions, resulting in good rectification. No significant barriers are detected in amorphous-n-type-Si junctions. A simple model is also presented to describe the junction.
Keywords :
p-n junctions; rectification; semiconductor device models; high barriers; modelling; rectification; semiconductor junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720054
