DocumentCode
916326
Title
Amorphous-crystalline silicon junctions
Author
Jayadevaiah, T.S. ; Busmundrud, Odd
Author_Institution
University of Wisconsin-Milwaukee, Laboratory for Surface Studies and College of Applied Science & Engineering, Milwaukee, USA
Volume
8
Issue
3
fYear
1972
Firstpage
75
Lastpage
77
Abstract
High barriers are observed in amorphous-p-type-silicon junctions, resulting in good rectification. No significant barriers are detected in amorphous-n-type-Si junctions. A simple model is also presented to describe the junction.
Keywords
p-n junctions; rectification; semiconductor device models; high barriers; modelling; rectification; semiconductor junctions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720054
Filename
4235499
Link To Document