Title :
A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications
Author :
Deng, Junxiong ; Gudem, Prasad S. ; Larson, Lawrence E. ; Kimball, Donald F. ; Asbeck, Peter M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
This paper demonstrates a two-stage 1.95-GHz WCDMA handset RFIC power amplifier (PA) implemented in a 0.25-μm SiGe BiCMOS process. With an integrated dual dynamic bias control of the collector current and collector voltage, the average power efficiency of the two-stage PA is improved from 1.9% to 5.0%. The measured power gain is 18.5 dB. The gain variation with dynamic biasing is less than 1.8 dB. An off-chip memoryless digital predistortion linearizer is also adopted, satisfying the 3GPP wideband code division multiple access (WCDMA) linearity specification by a 10 dB improvement of adjacent channel power ratio (ACPR) at +26 dBm average channel output power.
Keywords :
3G mobile communication; BiCMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; cellular radio; code division multiple access; linearisation techniques; mobile handsets; silicon compounds; 0.25 micron; 1.95 GHz; 18.5 dB; 3GPP; BiCMOS; SiGe; WCDMA; adjacent channel power ratio; collector current; collector voltage; dual dynamic bias control; handset RFIC; memoryless systems; off-chip memoryless digital predistortion linearizer; power amplifier; power efficiency; wideband code division multiple access; BiCMOS integrated circuits; Digital control; Gain; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Predistortion; Radiofrequency integrated circuits; Silicon germanium; Telephone sets; ACPR; Silicon Germanium; WCDMA; average power efficiency; digital predistortion; dynamic bias control; linearity; memoryless systems; power amplifiers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.872735
