Title :
Energy-balance model for Gunn domains
Author :
Cheung, P.S. ; Hearn, C.J.
Author_Institution :
University of Warwick, School of Physics, Coventry, UK
Abstract :
Domains are simulated using a new model in which the electron transport and relaxation coefficients depend on the mean energies of the electrons in the valleys, which are deduced from the energy balance within the domain. In GaAs, the accumulation layers are narrowed by cooling effects.
Keywords :
Gunn effect; semiconductor device models; accumulation layers; cooling effects; electron transport; energy balance; modelling; relaxation coefficients;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720056
