DocumentCode
916363
Title
Energy-balance model for Gunn domains
Author
Cheung, P.S. ; Hearn, C.J.
Author_Institution
University of Warwick, School of Physics, Coventry, UK
Volume
8
Issue
3
fYear
1972
Firstpage
79
Lastpage
80
Abstract
Domains are simulated using a new model in which the electron transport and relaxation coefficients depend on the mean energies of the electrons in the valleys, which are deduced from the energy balance within the domain. In GaAs, the accumulation layers are narrowed by cooling effects.
Keywords
Gunn effect; semiconductor device models; accumulation layers; cooling effects; electron transport; energy balance; modelling; relaxation coefficients;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720056
Filename
4235501
Link To Document