• DocumentCode
    916428
  • Title

    Application of mechanical stress for studying the interface properties of the Si-SiO2system

  • Author

    Sivo, L.L.

  • Volume
    59
  • Issue
    2
  • fYear
    1971
  • Firstpage
    317
  • Lastpage
    318
  • Abstract
    The surface component of the base current was IBSmonitored in gate-controlled n-p-n planar transistors as a function of anisotropic mechanical stress. The possible usefulness of such a technique is indicated for studying surface properties in general, and specifically for predicting surface damage in planar transistors due to ionizing radiation.
  • Keywords
    Anisotropic magnetoresistance; Conductors; Current measurement; Human factors; Ionizing radiation; Mechanical factors; Monitoring; Photonic band gap; Steel; Stress measurement;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8160
  • Filename
    1450090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=916428