DocumentCode :
916465
Title :
Comparison of low-energy proton damage in ion-implanted and diffused silicon solar cells
Author :
Stanley, A.G.
Volume :
59
Issue :
2
fYear :
1971
Firstpage :
321
Lastpage :
322
Abstract :
A comparison is made of low-energy proton damage in ion-implanted and diffused silicon solar cells. It is shown that ion-implanted cells are more radiation resistant.
Keywords :
Degradation; Educational institutions; Electrons; Feedback; Inspection; Oscillators; Photovoltaic cells; Protons; Silicon; Solid state circuits;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1971.8163
Filename :
1450093
Link To Document :
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