Characterization of diode-pumped laser operation of a novel Yb:GSO Crystal

Author

Xue, Yinghong ; Wang, Chingyue ; Liu, Qingwen ; Li, Yanfeng ; Chai, Lu ; Yan, Chengfeng ; Zhao, Guangjun ; Su, Liangbi ; Xu, Xiaodong ; Xu, Jun

Author_Institution

Ultrafast Laser Lab., Tianjin Univ., China

Volume

42

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

517

Lastpage

521

Abstract

We report what is believed to be the first demonstration of the laser action of Yb³⁺-doped Gd₂SiO₅ (Yb:GSO)crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm², which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm²). The laser wavelength is 1090 nm. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5W. By using the SESAM, the Q-switched modelocking and CW mode-locked operations are demonstrated.

Keywords

Q-switching; gadolinium compounds; gallium compounds; laser mode locking; optical couplers; optical pumping; solid lasers; ytterbium; 1090 nm; 415 mW; 940 nm; Gd₂SiO₅:Yb; Q-switching; diode-pumped Yb:GSO laser; laser generation threshold; mode locking; output coupler; Crystalline materials; Diode lasers; Laser excitation; Laser mode locking; Laser theory; Optical materials; Optical pumping; Power lasers; Pump lasers; Ultrafast optics; Continuous-wave (CW) mode locking; Yb:GSO crystal; diode-pumped lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2006.874060

Filename

1624420