Title :
Electric-field profile and current control of a long epitaxial GaAs n layer
Author :
Swartz, G.A. ; Gonzalez, A. ; Dreeben, A.
Author_Institution :
RCA Laboratories, Princeton, USA
Abstract :
Control of the cathode current is used to achieve an electric-field bias above the negative-resistance threshold field on an extended length of GaAs epitaxial layer grown on a semi-insulating substrate. The cathode current is controlled with a Schottky-barrier contact strip parallel to the cathode.
Keywords :
electric current control; epitaxial growth; negative resistance effects; semiconductor thin films; substrates; Schottky barrier diodes; cathode current; current regulation; electric fields; epitaxial growth; negative resistance; semiconductor thin films; substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720067
