Title :
An amorphous semiconductor RF switch
Author :
Stone, J.L. ; Porter, W.A. ; Linder, J.S. ; Haden, C.R.
Abstract :
Switching of an RF signal at 300 MHz by an amorphous semiconductor is reported. The material is Si3Ge4As38Te55, cut into a 1 mm3sample. Switching is accomplished by application of a 300-V pulse, with switching times less than 1 µs observed.
Keywords :
Amorphous semiconductors; Bandwidth; Cameras; Conducting materials; Filters; Image color analysis; Optical modulation; Radio frequency; Switches; TV;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8165
