DocumentCode
916520
Title
On the substrate current noise in MOS transistors beyond pinchoff
Author
Klaassen, F.M.
Volume
59
Issue
2
fYear
1971
Firstpage
331
Lastpage
332
Abstract
Low-frequency current noise flowing through the substrate contact has been observed in MOS transistors beyond pinchoff by means of a special circuit preventing a floating substrate potential. The noise is of the same order of magnitude as that observed in junction-gate FETs and evidently is due to impact ionization.
Keywords
Breakdown voltage; Circuit noise; Current measurement; Diodes; FETs; Frequency; Impact ionization; MOS capacitors; MOSFETs; Noise measurement;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1971.8169
Filename
1450099
Link To Document