Title :
Concentration dependent diffusion of arsenic in silicon
Author :
Kennedy, D.P. ; Murley, P.C.
Abstract :
Boltzmann-Matano analysis techniques have been applied to experimentally measured impurity atom distributions arising from arsenic diffusion into silicon. Inferred from this analysis is a concentration dependent diffusion coefficient at large arsenic concentrations. In addition, by comparing theory with experiment an estimate is given for the intrinsic diffusivity of arsenic in silicon.
Keywords :
Atomic measurements; Bipolar transistors; Differential equations; Diffusion processes; Mathematical model; Scattering; Semiconductor impurities; Silicon; Smoothing methods; Temperature distribution;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8172
