Title :
Gain and noise figure of GaAs transferred-electron amplifiers at 34 GHz
Author :
Baskaran, S. ; Robson, P.N.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Experimental results obtained from supercritical c.w. GaAs transferred-electron reflection amplifiers at about 34 GHz are reported. Gains in excess of 20 dB have been observed with typical (gain)¿×bandwidth products of 1.0¿1.5GHz. The best noise figure is 18 dB, and this parameter is shown to be sensitive to the doping profile. The output power for 1 dB gain compression is typically 2.5¿3.0 mW.
Keywords :
gain measurement; microwave amplifiers; noise measurement; doping profile; gain bandwidth product; gain compression; noise figure; transferred electron reflection amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720079
