Title :
Residual infrared absorption in as-grown and annealed crystals of Ti:Al2O3
Author :
Aggarwal, Roshan L. ; Sanchez, Antonio ; Stuppi, M.M. ; Fahey, Robert E. ; Strauss, Alan J. ; Rapoport, William R. ; Khattak, Chandra P.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
6/1/1988 12:00:00 AM
Abstract :
Data for as-grown and partially oxidized samples of Ti:Al2 O3 grown by the vertical-gradient-freeze technique show that the residual infrared absorption in these samples is largely due to Ti3+-Ti4+ pairs. In agreement with this pair model, the residual absorption in as-grown samples has been substantially decreased by annealing in a reducing atmosphere. Data for an as-grown crystal grown by the heat exchanger method indicate the presence of a second mechanism for residual absorption that may set a lower limit on the ratio of this absorption to the Ti+3 absorption used to pump laser emission
Keywords :
annealing; impurity and defect absorption spectra of inorganic solids; infrared spectra of inorganic solids; sapphire; solid lasers; titanium; zone melting; Al2O3:Ti; Ti:Al2O3; Ti3+-Ti4+ pairs; annealed crystals; as-grown samples; heat exchanger method; laser emission; partially oxidized samples; residual infrared absorption; sapphire; vertical-gradient-freeze technique; Annealing; Argon; Atmosphere; Atmospheric modeling; Crystals; Electromagnetic wave absorption; Electrons; Laser tuning; Oxidation; Pump lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
