DocumentCode
916654
Title
Junction-temperature measurement of IMPATT diodes
Author
Kenyon, N.D. ; D´Alessio, F.J.
Author_Institution
Bell Telephone Laboratories, Murray Hill, USA
Volume
8
Issue
5
fYear
1972
Firstpage
118
Lastpage
119
Abstract
The breakdown voltage VB of an IMPATT diode is a function of the junction temperature. Pulse techniques are applied to measure VB directly during actual operation, thus giving the temperature within an accuracy of a few per cent. The method also provides a display of ´space-charge resistance at the operating temperature.
Keywords
IMPATT diodes; semiconductor junctions; temperature measurement; IMPATT diode; breakdown voltage; junction temperature; space charge resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720085
Filename
4235532
Link To Document