Title :
Junction-temperature measurement of IMPATT diodes
Author :
Kenyon, N.D. ; D´Alessio, F.J.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, USA
Abstract :
The breakdown voltage VB of an IMPATT diode is a function of the junction temperature. Pulse techniques are applied to measure VB directly during actual operation, thus giving the temperature within an accuracy of a few per cent. The method also provides a display of ´space-charge resistance at the operating temperature.
Keywords :
IMPATT diodes; semiconductor junctions; temperature measurement; IMPATT diode; breakdown voltage; junction temperature; space charge resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720085
