Title :
Silicon detectors for charged particles manufactured by conventional planar technology
Author :
Sueva, D. ; Spassov, V. ; Chikov, N. ; Vapirev, E.I. ; Ivanov, I.
Author_Institution :
Fac. of Phys., Sophia Univ., Bulgaria
fDate :
6/1/1993 12:00:00 AM
Abstract :
Two types of detectors were developed by conventional planar technology: a p+-n-n+ ion-implanted detector and a n+p-p+ diffused detector. There was no observable difference in the quality of the detectors manufactured in this way. Both detectors were investigated for alpha and beta spectroscopy and exhibited good energy resolution. With an additional deposition of a 6LiF converter layer the detectors can be used for detection of neutrons
Keywords :
alpha-particle spectra; beta-ray spectra; neutron detection and measurement; semiconductor counters; 6LiF converter; Si detectors; alpha spectroscopy; beta spectroscopy; energy resolution; n+p-p+ diffused detector; neutron detector; p+-n-n+ ion-implanted detector; Charge carriers; Detectors; Ion implantation; Lead compounds; Manufacturing; Neutrons; Passivation; Silicon; Temperature; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
