Title :
A substrate heater with fast response for a low current ion-implanter
Author :
Swart, Pieter L. ; Lacquet, Beatrys M. ; Reynecke, Stephanus
Author_Institution :
Mater. Lab., Rand Afrikaans Univ., Auckland Park, South Africa
fDate :
6/1/1993 12:00:00 AM
Abstract :
A substrate heater using a 900-W tungsten lamp and a proportional-integral controller is presented. The externally generated radiation is directed onto a substrate in the target chamber. The temperature of the substrate is controlled to within ±1°C of the set temperature with a typical rise time of 5 s for a 430°C change in temperature. This is achieved with negligible overshoot
Keywords :
filament lamps; ion implantation; semiconductor technology; 430 degC; 5 s; 900 W; W; fast response; low current ion-implanter; proportional-integral controller; rise time; substrate heater; tungsten lamp; Crystalline materials; Heating; Implants; Ion beams; Lamps; Substrates; Temperature control; Thermal conductivity; Thermal resistance; Tungsten;
Journal_Title :
Nuclear Science, IEEE Transactions on
